S8550 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | S8550 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S8550
FEATURES
Pb
Lead-free
z
z
z
High Collector Current.(IC= -500mA）
Complementary To S8050.
Excellent HFE Linearity.
APPLICATIONS
z
High Collector Current.
SOT-23
ORDERING INFORMATION
Type No.
S8550
Marking
2TY
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current -Continuous
Collector Dissipation
-500
300
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTC080
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S8550
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=-100μA,IE=0
-40
V
V
V
V(BR)CEO
V(BR)EBO
IC=-1mA,IB=0
-25
-5
IE=-100μA,IC=0
ICBO
ICEO
IEBO
VCB=-40V,IE=0
VCE=-20V,IB=0
VEB=-3V,IC=0
-0.1
-0.1
-0.1
350
μA
μA
μA
Collector cut-off current
Emitter cut-off current
VCE=-1V,IC=-50mA
VCE=-1V,IC=-500mA
120
50
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=-500 mA, IB= -50mA
IC=-500 mA, IB= -50mA
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
VCE=-6V, IC= -20mA
f=30MHz
Transition frequency
fT
150
MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
120-200
200-350
Range
Document number: BL/SSSTC080
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S8550
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC080
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S8550
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
K
B
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
G
H
J
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
S8550
Package
SOT-23
Shipping
3000/Tape&Reel
Document number: BL/SSSTC080
Rev.A
www.galaxycn.com
4
相关型号：
S8550-AP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
S8550-B-BP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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